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Suppressed Charge Trapping Characteristics of (NH4)2Sx Passivated GaN MOS Device with Atomic Layer Deposited HfAlOx Gate Dielectric
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-08-03T01:52:05Z | - |
| dc.date.available | 2021-08-03T01:52:05Z | - |
| dc.date.issued | 2017-06-28 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/31963 | - |
| dc.title | Suppressed Charge Trapping Characteristics of (NH4)2Sx Passivated GaN MOS Device with Atomic Layer Deposited HfAlOx Gate Dielectric | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Conference on Insulating Films on Semiconductors (INFOS) | - |
| dc.citation.conferencePlace | 포츠담, 독일 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)