Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of Resistive Switching-Layer Oxygen- Concentration on Nonvolatile Memory Characteristics for Carbon-Oxide Based Reram
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-03T02:27:14Z | - |
| dc.date.available | 2021-08-03T02:27:14Z | - |
| dc.date.issued | 2017-05-29 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/32232 | - |
| dc.title | Effect of Resistive Switching-Layer Oxygen- Concentration on Nonvolatile Memory Characteristics for Carbon-Oxide Based Reram | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 231st ECS Meeting | - |
| dc.citation.conferencePlace | Hilton New Orleans Riverside | - |
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.