Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of Resistive Switching-Layer Oxygen- Concentration on Nonvolatile Memory Characteristics for Carbon-Oxide Based Reram
- Authors
- 박재근
- Issue Date
- 29-May-2017
- Place
- Hilton New Orleans Riverside
- Conference Name
- 231st ECS Meeting
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.