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spin-bribt coupling-driven magnetization switching in w and ta/CoFe/MgO layer for ultralow power spin memory applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍진표 | - |
| dc.date.accessioned | 2021-08-03T02:27:51Z | - |
| dc.date.available | 2021-08-03T02:27:51Z | - |
| dc.date.issued | 2017-05-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/32324 | - |
| dc.title | spin-bribt coupling-driven magnetization switching in w and ta/CoFe/MgO layer for ultralow power spin memory applications | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | ULSIC vs TFT: 6th international conference on semiconductor technology for ultra large scale integrated circuits and thin film transistors | - |
| dc.citation.conferencePlace | Autria | - |
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