Detailed Information

Cited 13 time in webofscience Cited 13 time in scopus
Metadata Downloads

Highly Stretchable, High-Mobility, Free-Standing All-Organic Transistors Modulated by Solid-State Elastomer Electrolytes

Authors
Park, Do HyungPark, Han WoolChung, Jong WonNam, KyungahChoi, ShinyoungChung, Yoon SunHwang, HaejungKim, BongSooKim, Do Hwan
Issue Date
May-2019
Publisher
WILEY-V C H VERLAG GMBH
Keywords
elastomer electrolyte; free-standing all-organic transistors; high-mobility; low-voltage operation; stretchable and conformal electronics
Citation
ADVANCED FUNCTIONAL MATERIALS, v.29, no.18, pp.1 - 9
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED FUNCTIONAL MATERIALS
Volume
29
Number
18
Start Page
1
End Page
9
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/32879
DOI
10.1002/adfm.201808909
ISSN
1616-301X
Abstract
Highly stretchable, high-mobility, and free-standing coplanar-type all-organic transistors based on deformable solid-state elastomer electrolytes are demonstrated using ionic thermoplastic polyurethane (i-TPU), thereby showing high reliability under mechanical stimuli as well as low-voltage operation. Unlike conventional ionic dielectrics, the i-TPU electrolyte prepared herein has remarkable characteristics, i.e., a large specific capacitance of 5.5 mu F cm(-2), despite the low weight ratio (20 wt%) of the ionic liquid, high transparency, and even stretchability. These i-TPU-based organic transistors exhibit a mobility as high as 7.9 cm(2) V-1 s(-1), high bendability (R-c, radius of curvature: 7.2 mm), and good stretchability (60% tensile strain). Moreover, they are suitable for low-voltage operation (V-DS = -1.0 V, V-GS = -2.5 V). In addition, the electrical characteristics such as mobility, on-current, and threshold voltage are maintained even in the concave and convex bending state (bending tensile strain of approximate to 3.4%), respectively. Finally, free-standing, fully stretchable, and semi-transparent coplanar-type all-organic transistors can be fabricated by introducing a poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid layer as source/drain and gate electrodes, thus achieving low-voltage operation (V-DS = -1.5 V, V-GS = -2.5 V) and an even higher mobility of up to 17.8 cm(2) V-1 s(-1). Moreover, these devices withstand stretching up to 80% tensile strain.
Files in This Item
Go to Link
Appears in
Collections
서울 공과대학 > 서울 화학공학과 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Kim, Do Hwan photo

Kim, Do Hwan
COLLEGE OF ENGINEERING (DEPARTMENT OF CHEMICAL ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

BROWSE