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Heterojunction diodes with atomically sharp interface from structures with n-MoS2 layer on p+-Si substrates

Authors
김은규
Issue Date
17-Feb-2017
Publisher
한국진공학회
Citation
제52회 한국진공학회 동계정기학술대회
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/33701
Conference Name
제52회 한국진공학회 동계정기학술대회
Place
웰리힐리파크
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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