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Atomic Layer Deposited Gate Spacer for New Memory Devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-03T05:26:25Z | - |
| dc.date.available | 2021-08-03T05:26:25Z | - |
| dc.date.issued | 2016-11-16 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/34292 | - |
| dc.title | Atomic Layer Deposited Gate Spacer for New Memory Devices | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한-일 재료공학 심포지엄 | - |
| dc.citation.conferencePlace | 경주 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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