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In-situ monitoring system equipped with FT-IR and QMS, and thermal decomposition of Zr(NCH₃C₂H₅)₄ precursor

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dc.contributor.authorPark, I.-S.-
dc.contributor.authorSeong, S.-
dc.contributor.authorJung, Y.C.-
dc.contributor.authorLee, T.-
dc.contributor.authorAhn, J.-
dc.contributor.authorAn, J.-K.-
dc.contributor.authorYun, J.-
dc.date.accessioned2021-08-03T06:06:08Z-
dc.date.available2021-08-03T06:06:08Z-
dc.date.created2021-06-29-
dc.date.issued2016-10-02-
dc.identifier.issn1938-5862-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/35286-
dc.description.abstractAn in-situ monitoring system equipped with both fourier transform infrared (FT-IR) spectroscopy and quadrupole mass spectroscopy (QMS) was introduced to measure the decomposition of tetrakis(ethylmethylamino)zirconium (TEMAZr, Zr(NCH₃C₂H₅)₄), a precursor which is often used in ALD of ZrO₂ films. For the actual influence of the decomposition state of the metalorganic precursor on the properties of the produced film, Zr(NCH₃C₂H₅)4 precursor was heated in the temperature range from 100 °C to 200 °C with steps of 25 °C. The acquisition data from FT-IR and QMS at 500 °C were used as a reference for the fully decomposed precursor, to compare with those obtained at lower temperatures. The increase of the IR peak at 2962 cm⁻¹ due to the asymmetrical C-H stretch mode in CH3 ligands and the appearance of a weak peak around 710 cm⁻¹ due to wagging N-H bonds were useful in monitoring the decomposition of Zr(NCH3C2H5)4, where the latter started to appear as of 125 °C, indicating the onset temperature of decomposition. © 2016 The Electrochemical Society.-
dc.language영어-
dc.language.isoen-
dc.publisherElectrochemical Society Inc.-
dc.titleIn-situ monitoring system equipped with FT-IR and QMS, and thermal decomposition of Zr(NCH₃C₂H₅)₄ precursor-
dc.title.alternativeIn-situ monitoring system equipped with FT-IR and QMS, and thermal decomposition of Zr(NCH3C2H5)4 precursor-
dc.typeConference-
dc.contributor.affiliatedAuthorAhn, J.-
dc.identifier.scopusid2-s2.0-84991573512-
dc.identifier.bibliographicCitationSymposium on Atomic Layer Deposition Applications 12 - PRiME 2016/230th ECS Meeting, pp.123 - 128-
dc.relation.isPartOfSymposium on Atomic Layer Deposition Applications 12 - PRiME 2016/230th ECS Meeting-
dc.relation.isPartOfECS Transactions-
dc.citation.titleSymposium on Atomic Layer Deposition Applications 12 - PRiME 2016/230th ECS Meeting-
dc.citation.startPage123-
dc.citation.endPage128-
dc.citation.conferencePlaceUS-
dc.citation.conferenceDate2016-10-02-
dc.type.rimsCONF-
dc.description.journalClass1-
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