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Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors
- Issue Date
- Mar-2017
- Publisher
- The Korean Physical Society
- Keywords
- InGaSb; Balanced CMOS; High mobility; Strain
- Citation
- Current Applied Physics, v.17, no.3, pp 417 - 421
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- Current Applied Physics
- Volume
- 17
- Number
- 3
- Start Page
- 417
- End Page
- 421
- ISSN
- 1567-1739
1878-1675
- Abstract
- We designed and fabricated an Al0.9Ga0.1Sb/In0.4Ga0.6Sb/Al0.9Ga0.1Sb quantum well (QW) with a balanced band offset for channel materials in future complementary metal-oxide-semiconductor (CMOS) circuits. The QW design was carried out by one-dimensional Schrodinger Poisson equation system. The QW was grown by molecular beam epitaxy and the crystallinity and the surface morphology were characterized using a transmission electron microscope (TEM) and atomic force microscope (AFM), respectively. The results showed good crystalline behaviors and morphologies without any identifiable morphological defects. Furthermore, we investigated the strain characteristics in In0.4Ga0.6Sb by measuring the Raman shift. We found that In0.4Ga0.6Sb has high compressive strain of 1.74% and the strain distribution was uniform.
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)