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Performance Improvement of the Gate-Last Si-based TFET with Atomic Layer Deposited HfAlOx Gate Dielectrics
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-08-03T06:16:32Z | - |
| dc.date.available | 2021-08-03T06:16:32Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2016-07-05 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/36024 | - |
| dc.publisher | IEICE/IEIE | - |
| dc.title | Performance Improvement of the Gate-Last Si-based TFET with Atomic Layer Deposited HfAlOx Gate Dielectrics | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 최창환 | - |
| dc.identifier.bibliographicCitation | Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) | - |
| dc.relation.isPartOf | Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) | - |
| dc.citation.title | Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) | - |
| dc.citation.conferencePlace | Hakodate, Japan | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)