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High mobility thin film transistors formed by metal-induced crystallization of amorphous zinc tin oxide semiconductors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정재경 | - |
| dc.date.accessioned | 2021-08-03T06:38:46Z | - |
| dc.date.available | 2021-08-03T06:38:46Z | - |
| dc.date.issued | 2016-04-08 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/37215 | - |
| dc.title | High mobility thin film transistors formed by metal-induced crystallization of amorphous zinc tin oxide semiconductors | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한양대학교 & 푸단대학교 워크샵 | - |
| dc.citation.conferencePlace | 제주도 서귀포 칼호텔 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)