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Improvement in high mobility of top gate zinc tin oxide transistor by metal capping method
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정재경 | - |
| dc.date.accessioned | 2021-08-03T06:42:53Z | - |
| dc.date.available | 2021-08-03T06:42:53Z | - |
| dc.date.issued | 2016-02-24 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/37462 | - |
| dc.title | Improvement in high mobility of top gate zinc tin oxide transistor by metal capping method | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 강원도 하이원리조트 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)