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A simulation model for reliability prediction of progressive breakdown in ultra-thin gate oxides
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 배석주 | - |
| dc.date.accessioned | 2021-08-03T06:59:58Z | - |
| dc.date.available | 2021-08-03T06:59:58Z | - |
| dc.date.issued | 2015-11-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/38349 | - |
| dc.title | A simulation model for reliability prediction of progressive breakdown in ultra-thin gate oxides | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | EAWIE 2015 | - |
| dc.citation.conferencePlace | 서울 연세대학교 | - |
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Collections - 서울 공과대학 > 서울 산업공학과 > 2. Conference Papers
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- Bae, Suk Joo
- COLLEGE OF ENGINEERING (DEPARTMENT OF INDUSTRIAL ENGINEERING)