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Unveiling highly stable features of Al metal evaporation-assisted-solution-processed ZnO thin film transistors

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dc.contributor.author홍진표-
dc.date.accessioned2021-08-03T07:50:30Z-
dc.date.available2021-08-03T07:50:30Z-
dc.date.issued2015-04-23-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/40756-
dc.titleUnveiling highly stable features of Al metal evaporation-assisted-solution-processed ZnO thin film transistors-
dc.typeConference-
dc.citation.conferenceName한국 물리학회-
dc.citation.conferencePlace대전 컨벤션 센터-
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