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Enhancement of the Electrical Characteristics due to an Embedded Low-k Dielectric Layer between a Transition Metal Layer and an Oxide Layer in Resistive Random Access Memory Devices

Authors
김태환
Issue Date
6-Nov-2014
Publisher
Gwangju-Jeonnam Nanotechnology Union
Citation
The 12th International Conference on Nano Science and Nano Technology
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/42162
Conference Name
The 12th International Conference on Nano Science and Nano Technology
Place
Mokpo National University & Shangria Beach Hotel, Korea
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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