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Role of Oxygen-Doped Ta Spacer on the Enhanced Perpendicular Magnetic Anisotropy Features of CoFeB/MgO Interface for the STT-MRAM Applications

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dc.contributor.author홍진표-
dc.date.accessioned2021-08-03T10:35:59Z-
dc.date.available2021-08-03T10:35:59Z-
dc.date.issued2014-02-26-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/45126-
dc.titleRole of Oxygen-Doped Ta Spacer on the Enhanced Perpendicular Magnetic Anisotropy Features of CoFeB/MgO Interface for the STT-MRAM Applications-
dc.typeConference-
dc.citation.conferenceNameThe 21st Conference on Semiconductors-
dc.citation.conferencePlaceHanyang University-
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