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Ge 기판의 S처리를 이용한 Charge-Trapping Type 소자의 메모리 특성연구
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안진호 | - |
| dc.date.accessioned | 2021-08-03T10:36:05Z | - |
| dc.date.available | 2021-08-03T10:36:05Z | - |
| dc.date.issued | 2014-02-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/45139 | - |
| dc.title | Ge 기판의 S처리를 이용한 Charge-Trapping Type 소자의 메모리 특성연구 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제 21회 한국반도체 학술대회 | - |
| dc.citation.conferencePlace | 한양대학교 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)