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Non-Lattice Oxygen Ion Driven Negative Differential Resistance Behavior for the Future ReRAM Appications
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍진표 | - |
| dc.date.accessioned | 2021-08-03T10:36:07Z | - |
| dc.date.available | 2021-08-03T10:36:07Z | - |
| dc.date.issued | 2014-02-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/45143 | - |
| dc.title | Non-Lattice Oxygen Ion Driven Negative Differential Resistance Behavior for the Future ReRAM Appications | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 21st Korean Conference on Semiconductors | - |
| dc.citation.conferencePlace | Hanyang University, Seoul, Korea | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)