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Bipolar and complementary resitive switching characteristics in binary oxide-based multilayer matrix for 3D stackable nonvolatile memory applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍진표 | - |
| dc.date.accessioned | 2021-08-03T10:49:12Z | - |
| dc.date.available | 2021-08-03T10:49:12Z | - |
| dc.date.issued | 2014-01-15 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/45380 | - |
| dc.title | Bipolar and complementary resitive switching characteristics in binary oxide-based multilayer matrix for 3D stackable nonvolatile memory applications | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2nd Joint Symposium between Chiang Mai University and Hanyang University in Basic Science | - |
| dc.citation.conferencePlace | Faculty of Science, Chiang Mai University, Thailand | - |
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