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Oxygen ion drift-driven stable bipolar resistive switching features in binary oxide-based multilayer configuration for 3D stackable nonvolatile memory applications
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍진표 | - |
| dc.date.accessioned | 2021-08-03T10:49:58Z | - |
| dc.date.available | 2021-08-03T10:49:58Z | - |
| dc.date.issued | 2013-12-12 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/45462 | - |
| dc.title | Oxygen ion drift-driven stable bipolar resistive switching features in binary oxide-based multilayer configuration for 3D stackable nonvolatile memory applications | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 12th international conference on frontier of Polymer and advanced materials | - |
| dc.citation.conferencePlace | 뉴질랜드 오클랜드 | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)