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Effect of the dielectric material inserted into the transition metal in the unipolar resistive random access memory devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2021-08-03T11:19:46Z | - |
| dc.date.available | 2021-08-03T11:19:46Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2013-11-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/45965 | - |
| dc.publisher | Gwangju-jeonnam Nanotechnology Union | - |
| dc.title | Effect of the dielectric material inserted into the transition metal in the unipolar resistive random access memory devices | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김태환 | - |
| dc.identifier.bibliographicCitation | The 11th International Conference on Nano Science and Nano Technlogy | - |
| dc.relation.isPartOf | The 11th International Conference on Nano Science and Nano Technlogy | - |
| dc.citation.title | The 11th International Conference on Nano Science and Nano Technlogy | - |
| dc.citation.conferencePlace | Chosun University, Gwangju, Korea | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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