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Effect of the dielectric material inserted into the transition metal in the unipolar resistive random access memory devices
- Authors
- 김태환
- Issue Date
- 7-Nov-2013
- Publisher
- Gwangju-jeonnam Nanotechnology Union
- Citation
- The 11th International Conference on Nano Science and Nano Technlogy
- Conference Name
- The 11th International Conference on Nano Science and Nano Technlogy
- Place
- Chosun University, Gwangju, Korea
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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