Leakage Control System Using Data Estimation of Resistive Memory

Abstract

In this work, we present a data-aware read sneak current control technique for improving sensing margins in cross-point (X-point) resistive memories. We introduce a novel method of estimating resistive memory data distribution. The result from this estimation is utilized for determining adequate bias condition for reliable read operation. The adjusted bias condition will realize constant leakage current, which facilitates reliable sensing regardless of the data distribution in the resistive memory array.