Novel naphthalene-diimide-based small molecule with a bithiophene linker for use in organic field-effect transistors
- Authors
- Ha, Yeon Hee; Oh, Jong Gyu; Park, Sejin; Kwon, Soon-Ki; An, Tae Kyu; Jang, Jaeyoung; Kim, Yun-Hi
- Issue Date
- Dec-2018
- Publisher
- ELSEVIER
- Keywords
- Organic field-effect transistors (OFETs); Naphthalene diimide (NDI); Rotatable bithiophene linker; n-type; Thermal annealing; Small molecules
- Citation
- ORGANIC ELECTRONICS, v.63, pp.250 - 256
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 63
- Start Page
- 250
- End Page
- 256
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/4646
- DOI
- 10.1016/j.orgel.2018.09.037
- ISSN
- 1566-1199
- Abstract
- We report on the synthesis and characterization of a novel naphthalene diimide (NDI)-based small molecule with a bithiophene linker unit, NDI-BT-NDI-EH, for application as a solution-processable n-channel active material in organic field-effect transistors (OFETs). NDI-BT-NDI-EH was synthesized via the Stille coupling reaction and the bithiophene linker unit was introduced as a rotatable linker between two NDI cores to improve the solubility of NDI-BT-NDI-EH while maintaining its high field-effect mobility. We found that the crystallinity and molecular ordering of NDI-BT-NDI-EH thin films could be improved by thermal annealing; a moderate annealing temperature of 120 degrees C appeared to be optimal for promoting self-organization among the NDI-BT-NDI-EH molecules. The NDI-BT-NDI-EH molecules in thermally annealed thin films mainly adopted an edge-on orientation with improved pi-pi stacking on the surface of octyltrichlorosilane-treated SiO2 substrates, which is favorable for lateral charge transport. As a result, the optimally annealed NDI-BT-NDI-EH OFET exhibited evident n-type OFET characteristics with high field-effect mobilities of up to 0.016 cm(2) V-1 s(-1) and an on/off ratio of 1.4 x 10(5).
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