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Low-temperature processed IGTO thin-film transistors with high mobility by reducing deposition pressure
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hyeon-A | - |
| dc.contributor.author | Kim, Jeong Oh | - |
| dc.contributor.author | Hur, Jae Seok | - |
| dc.contributor.author | Jeong, Jae Kyeong | - |
| dc.date.accessioned | 2021-07-30T05:24:29Z | - |
| dc.date.available | 2021-07-30T05:24:29Z | - |
| dc.date.issued | 2018-12 | - |
| dc.identifier.issn | 1883-2490 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/4650 | - |
| dc.description.abstract | The sputtered IGTO films were prepared as the channel for the oxide thin-film transistors. The effects of chamber pressure (Pc) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. While at high Pc exhibited degraded device performance, the IGTO transistors fabricated at tow Pc and low annealing temperature of 150 °C showed a high mobility of 35.0 cm2/Vs and a low subthreshold gate swing of 0.17 V/decade. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.title | Low-temperature processed IGTO thin-film transistors with high mobility by reducing deposition pressure | - |
| dc.type | Article | - |
| dc.identifier.scopusid | 2-s2.0-85072126961 | - |
| dc.identifier.bibliographicCitation | Proceedings of the International Display Workshops, v.1, pp 340 - 342 | - |
| dc.citation.title | Proceedings of the International Display Workshops | - |
| dc.citation.volume | 1 | - |
| dc.citation.startPage | 340 | - |
| dc.citation.endPage | 342 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Carrier mobility | - |
| dc.subject.keywordPlus | Densification | - |
| dc.subject.keywordPlus | Deposition | - |
| dc.subject.keywordPlus | Gallium compounds | - |
| dc.subject.keywordPlus | Indium compounds | - |
| dc.subject.keywordPlus | Oxide films | - |
| dc.subject.keywordPlus | Sputtering | - |
| dc.subject.keywordPlus | Temperature | - |
| dc.subject.keywordPlus | Thin film transistors | - |
| dc.subject.keywordPlus | Thin films | - |
| dc.subject.keywordPlus | Tin oxides | - |
| dc.subject.keywordPlus | Annealing temperatures | - |
| dc.subject.keywordPlus | Chamber pressure | - |
| dc.subject.keywordPlus | Channel layers | - |
| dc.subject.keywordPlus | Deposition pressures | - |
| dc.subject.keywordPlus | Device performance | - |
| dc.subject.keywordPlus | High mobility | - |
| dc.subject.keywordPlus | Low temperatures | - |
| dc.subject.keywordPlus | Oxide thin-film transistors | - |
| dc.subject.keywordPlus | Thin film circuits | - |
| dc.subject.keywordAuthor | Densification | - |
| dc.subject.keywordAuthor | Indium gallium tin oxide (IGTO) | - |
| dc.subject.keywordAuthor | Low temperature | - |
| dc.subject.keywordAuthor | Mobility | - |
| dc.subject.keywordAuthor | Sputtering | - |
| dc.identifier.url | https://www.idw.or.jp/18archive/ | - |
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)