Low-temperature processed IGTO thin-film transistors with high mobility by reducing deposition pressure
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hyeon-A | - |
dc.contributor.author | Kim, Jeong Oh | - |
dc.contributor.author | Hur, Jae Seok | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-07-30T05:24:29Z | - |
dc.date.available | 2021-07-30T05:24:29Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.issn | 1883-2490 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/4650 | - |
dc.description.abstract | The sputtered IGTO films were prepared as the channel for the oxide thin-film transistors. The effects of chamber pressure (Pc) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. While at high Pc exhibited degraded device performance, the IGTO transistors fabricated at tow Pc and low annealing temperature of 150 °C showed a high mobility of 35.0 cm2/Vs and a low subthreshold gate swing of 0.17 V/decade. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | International Display Workshops | - |
dc.title | Low-temperature processed IGTO thin-film transistors with high mobility by reducing deposition pressure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.scopusid | 2-s2.0-85072126961 | - |
dc.identifier.bibliographicCitation | Proceedings of the International Display Workshops, v.1, pp.340 - 342 | - |
dc.relation.isPartOf | Proceedings of the International Display Workshops | - |
dc.citation.title | Proceedings of the International Display Workshops | - |
dc.citation.volume | 1 | - |
dc.citation.startPage | 340 | - |
dc.citation.endPage | 342 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Carrier mobility | - |
dc.subject.keywordPlus | Densification | - |
dc.subject.keywordPlus | Deposition | - |
dc.subject.keywordPlus | Gallium compounds | - |
dc.subject.keywordPlus | Indium compounds | - |
dc.subject.keywordPlus | Oxide films | - |
dc.subject.keywordPlus | Sputtering | - |
dc.subject.keywordPlus | Temperature | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Tin oxides | - |
dc.subject.keywordPlus | Annealing temperatures | - |
dc.subject.keywordPlus | Chamber pressure | - |
dc.subject.keywordPlus | Channel layers | - |
dc.subject.keywordPlus | Deposition pressures | - |
dc.subject.keywordPlus | Device performance | - |
dc.subject.keywordPlus | High mobility | - |
dc.subject.keywordPlus | Low temperatures | - |
dc.subject.keywordPlus | Oxide thin-film transistors | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordAuthor | Densification | - |
dc.subject.keywordAuthor | Indium gallium tin oxide (IGTO) | - |
dc.subject.keywordAuthor | Low temperature | - |
dc.subject.keywordAuthor | Mobility | - |
dc.subject.keywordAuthor | Sputtering | - |
dc.identifier.url | https://www.idw.or.jp/18archive/ | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.