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Characteristics of Atomic Layer Deposition SnO2 films using TDMASn precursor and various oxygen reactants
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진성 | - |
| dc.date.accessioned | 2021-08-03T11:48:52Z | - |
| dc.date.available | 2021-08-03T11:48:52Z | - |
| dc.date.created | 2021-07-01 | - |
| dc.date.issued | 2013-10-09 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/46822 | - |
| dc.publisher | Taiwan Association for coating and thin films technology | - |
| dc.title | Characteristics of Atomic Layer Deposition SnO2 films using TDMASn precursor and various oxygen reactants | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 박진성 | - |
| dc.identifier.bibliographicCitation | TACT 2013 (Taiwan Association for Coating and Thin Films Technology) | - |
| dc.relation.isPartOf | TACT 2013 (Taiwan Association for Coating and Thin Films Technology) | - |
| dc.citation.title | TACT 2013 (Taiwan Association for Coating and Thin Films Technology) | - |
| dc.citation.conferencePlace | The Grand hotel, Taipei, Taiwan | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)