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Post annealing effect of the P-type copper oxide thin films using atomic layer deposition

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dc.contributor.author박진성-
dc.date.accessioned2021-08-03T11:52:04Z-
dc.date.available2021-08-03T11:52:04Z-
dc.date.created2021-07-01-
dc.date.issued2013-08-27-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/47153-
dc.publishereuropean society of thin films, fraunhofer-
dc.titlePost annealing effect of the P-type copper oxide thin films using atomic layer deposition-
dc.typeConference-
dc.contributor.affiliatedAuthor박진성-
dc.identifier.bibliographicCitationthe 9th Asian-European International Conference On Plasma Surface Engineering-
dc.relation.isPartOfthe 9th Asian-European International Conference On Plasma Surface Engineering-
dc.citation.titlethe 9th Asian-European International Conference On Plasma Surface Engineering-
dc.citation.conferencePlaceRamada plaza Jeju hotel, Jeju, Koera-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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