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The effecs of oxygen partial pressures in Ge doped InGaO Thin Film Transistors
- Authors
- 박진성
- Issue Date
- 5-Jul-2013
- Publisher
- 한국물리학회, 자연과학종합연구원
- Citation
- the 16th International Symposium on the Physics of Semiconductors and Applications
- Conference Name
- the 16th International Symposium on the Physics of Semiconductors and Applications
- Place
- Ramada Plaza Jeju hotel, Jeju, Koera
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)