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Effects of Composition and Thickness of TiN Metal Gate on the Equivalent Oxide Thickness and Flat-Band Voltage in Metal Oxide Semiconductor Devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-08-03T12:21:50Z | - |
| dc.date.available | 2021-08-03T12:21:50Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2013-06-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/47663 | - |
| dc.publisher | Institute of Microelectronics and Optoelectronics, Warsaw University of Technology | - |
| dc.title | Effects of Composition and Thickness of TiN Metal Gate on the Equivalent Oxide Thickness and Flat-Band Voltage in Metal Oxide Semiconductor Devices | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 최창환 | - |
| dc.identifier.bibliographicCitation | INFOS | - |
| dc.relation.isPartOf | INFOS | - |
| dc.citation.title | INFOS | - |
| dc.citation.conferencePlace | Cracow, Poland | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)