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Design of C-MOSFETs fabricated on Ge-on-insulator (GeOI) for beyond 10 nm
- Authors
- 박재근
- Issue Date
- 30-May-2013
- Place
- The University of Texas at Dallas
- Conference Name
- 2013 SiWEDS Spring Meeting
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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