Multi-objective optimization of tungsten CMP slurry for advanced semiconductor manufacturing using a response surface methodology
- Authors
- Seo, Jihoon; Kim, Joo Hyun; Lee, Myoungjae; You, Keungtae; Moon, Jinok; Lee, Dong-Hee; Paik, Ungyu
- Issue Date
- Mar-2017
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Chemical mechanical planarization; Optimization; Response surface methodology; Slurries; Semiconductor manufacturing process
- Citation
- MATERIALS & DESIGN, v.117, pp.131 - 138
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS & DESIGN
- Volume
- 117
- Start Page
- 131
- End Page
- 138
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/4807
- DOI
- 10.1016/j.matdes.2016.12.066
- ISSN
- 0264-1275
- Abstract
- In this study, a response surface methodology (RSM) coupled with a face center cube design (FCD) was used to optimize the three principal components (i.e., Fe(NO3)3, H2O2, and SiO2 abrasives) in polishing slurries for a W barrier chemical mechanical planarization (CMP) process. The experimental ranges of the three components were 10–50 ppm of Fe(NO3)3, 0.3–0.9 wt% of H2O2, and 1–5 wt% of SiO2 abrasives. Based on the experimental data from the FCD, the second-order models for the material removal rate (MRR) of the W and Oxide films were fitted; these were determined to be statistically valid and reliable. We have achieved the optimal conditions for the three components where the MRR is maximized and the selectivity between the W and Oxide MRRs is ~ 1. The predicted MRR and selectivity at the optimal conditions were well correlated with the results of a confirmation run, which was conducted by using the W barrier CMP process with W-patterned wafers. In addition, we employed a particular RSM called dual-response optimization in order to investigate the tradeoff between the MRR and selectivity. Based on the tradeoff information, process engineers can conduct the optimization of the three components more flexibly.
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