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Effect of Two-step Oxidation in Ge Condensation on Surface Roughness Property of Relaxed SiGe layer-on-insulator Substrates
- Authors
- 박재근
- Issue Date
- 10-Oct-2012
- Place
- Hawaii Convention Center and the Hilton Hawaiian Village
- Conference Name
- 222nd ECS Meeting
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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