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The impact of niobium dopant in TiOx Thin film transistors under electrical gate bias stresses

Authors
박진성
Issue Date
28-Aug-2012
Publisher
KIDS, SID
Citation
The 121th International Meeting on Information Display(IMID 2012)
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/50822
Conference Name
The 121th International Meeting on Information Display(IMID 2012)
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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Park, Jinseong
COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
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