Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Modulation of Flatband Voltage with Varying Nitrogen Composition and Thickness of TiN Metal Gate in Metal Oxide Semiconductor Devices with Atomic Layer Deposited HfO2 Gate Dielectric
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-08-03T14:35:15Z | - |
| dc.date.available | 2021-08-03T14:35:15Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2012-08-17 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/50962 | - |
| dc.publisher | MEST, MKE, KoNTRS, NRF, KEIT | - |
| dc.title | Modulation of Flatband Voltage with Varying Nitrogen Composition and Thickness of TiN Metal Gate in Metal Oxide Semiconductor Devices with Atomic Layer Deposited HfO2 Gate Dielectric | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 최창환 | - |
| dc.identifier.bibliographicCitation | Nano Korea Symposium | - |
| dc.relation.isPartOf | Nano Korea Symposium | - |
| dc.citation.title | Nano Korea Symposium | - |
| dc.citation.conferencePlace | Seoul, Korea | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)