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Interface Improvement of ALD Al2O3 Gate Dielectric/6H-SiC Substrate by Hydrogenation Passivation Technique
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-08-03T15:18:13Z | - |
| dc.date.available | 2021-08-03T15:18:13Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2012-05-22 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/51738 | - |
| dc.publisher | KIEEME, IEEK, KIM, MRS | - |
| dc.title | Interface Improvement of ALD Al2O3 Gate Dielectric/6H-SiC Substrate by Hydrogenation Passivation Technique | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 최창환 | - |
| dc.identifier.bibliographicCitation | 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI) | - |
| dc.relation.isPartOf | 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI) | - |
| dc.citation.title | 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI) | - |
| dc.citation.conferencePlace | Busan Bexco, Korea | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)