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Effects of Interface Plasma Passivation of Pt/Al2O3/6H-SiC MOS Devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-08-03T15:37:14Z | - |
| dc.date.available | 2021-08-03T15:37:14Z | - |
| dc.date.issued | 2012-02-16 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/52639 | - |
| dc.title | Effects of Interface Plasma Passivation of Pt/Al2O3/6H-SiC MOS Devices | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제19회 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 고려대학교 (서울), 한국 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)