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Selection device free resistive switching in TiOx-based triple framework for the highly 3D stackable nonvolatile memory application
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 홍진표 | - |
| dc.date.accessioned | 2021-08-03T15:37:18Z | - |
| dc.date.available | 2021-08-03T15:37:18Z | - |
| dc.date.issued | 2012-02-16 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/52646 | - |
| dc.title | Selection device free resistive switching in TiOx-based triple framework for the highly 3D stackable nonvolatile memory application | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Chiang Mai-Hanyang university joint symposium in basic science | - |
| dc.citation.conferencePlace | Chiang Mai | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)