Improvement in the bias stability of IGZO thin film transistors using Al2O3 buffer layer growth on Si3N4 dielectric layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2021-08-03T16:33:16Z | - |
dc.date.available | 2021-08-03T16:33:16Z | - |
dc.date.issued | 20111027 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/53735 | - |
dc.title | Improvement in the bias stability of IGZO thin film transistors using Al2O3 buffer layer growth on Si3N4 dielectric layer | - |
dc.type | Conference | - |
dc.citation.conferenceName | 2011 한국재료학회 추계학술발표대회 및 제 21회 신소재 심포지엄 | - |
dc.citation.conferencePlace | 신라대학교 | - |
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