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Effective Oxidation Method to Fabricate Relaxed SiGe-on-Insulator (SGOI) Substrate with High Ge Concentration by Ge Condensation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-03T16:34:59Z | - |
| dc.date.available | 2021-08-03T16:34:59Z | - |
| dc.date.issued | 2011-10-20 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/53897 | - |
| dc.title | Effective Oxidation Method to Fabricate Relaxed SiGe-on-Insulator (SGOI) Substrate with High Ge Concentration by Ge Condensation | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2011 한국물리학회 가을학술논문발표회 | - |
| dc.citation.conferencePlace | 부산 BEXCO | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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