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Effective Oxidation Method to Fabricate Relaxed SiGe-on-Insulator (SGOI) Substrate with High Ge Concentration by Ge Condensation
- Authors
- 박재근
- Issue Date
- 20-Oct-2011
- Place
- 부산 BEXCO
- Conference Name
- 2011 한국물리학회 가을학술논문발표회
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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