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Design of Extreme Proximity Gettering for Advanced Semiconductor Devices Beyond 3X nm Technology - Understanding the dependency of Ta decoration on crystalline nature after device heat-treatment of 3X technology
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-03T16:35:50Z | - |
| dc.date.available | 2021-08-03T16:35:50Z | - |
| dc.date.issued | 2011-10-14 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/53977 | - |
| dc.title | Design of Extreme Proximity Gettering for Advanced Semiconductor Devices Beyond 3X nm Technology - Understanding the dependency of Ta decoration on crystalline nature after device heat-treatment of 3X technology | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2011 SiWEDS Fall Meeting | - |
| dc.citation.conferencePlace | Westin Boston Waterfront and the Boston Convention and Exhibition Center | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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