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Improved Material Properties of a-GaN on r-Sapphire with High Temperature GaN Multiple Buffer Layers by Metal-organic Chemical Vapor Deposition
- Authors
- 박진섭
- Issue Date
- 12-Jul-2011
- Place
- Glasgow, UK
- Conference Name
- 9th International Conference on Nitride Semiconductors
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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Related Researcher
- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)