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Bias dependence of PBTI degradation mechanism in metal-oxide semiconductor field effect transistors with La-incorporated hafnium-based dielectric

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dc.contributor.author최창환-
dc.date.accessioned2021-08-03T17:20:25Z-
dc.date.available2021-08-03T17:20:25Z-
dc.date.created2021-06-30-
dc.date.issued2011-06-23-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/54928-
dc.publisherCEA-LETI, IMEP-
dc.titleBias dependence of PBTI degradation mechanism in metal-oxide semiconductor field effect transistors with La-incorporated hafnium-based dielectric-
dc.typeConference-
dc.contributor.affiliatedAuthor최창환-
dc.identifier.bibliographicCitation17th Conference on Insulating Films on Semiconductors (INFOS)-
dc.relation.isPartOf17th Conference on Insulating Films on Semiconductors (INFOS)-
dc.citation.title17th Conference on Insulating Films on Semiconductors (INFOS)-
dc.citation.conferencePlaceGrenoble, France-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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