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The effects of RF powere on remote plasma atomic layer deposited Al2O3 passivation layer to improve the electrical stability of IGZO TFTs

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dc.contributor.author전형탁-
dc.date.accessioned2021-08-03T17:32:57Z-
dc.date.available2021-08-03T17:32:57Z-
dc.date.issued20110526-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/55195-
dc.titleThe effects of RF powere on remote plasma atomic layer deposited Al2O3 passivation layer to improve the electrical stability of IGZO TFTs-
dc.typeConference-
dc.citation.conferenceName2011 한국재료학회 춘계학술발표대회 및 제 20회 신소재 심포지엄-
dc.citation.conferencePlace제주 휘닉스 아일랜드-
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
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