Photo-patternable high-k ZrOx dielectrics prepared using zirconium acrylate for low-voltage-operating organic complementary inverters
- Authors
- Jeong, Yong Jin; Yun, Dong-Jin; Nam, Sooji; Suh, Eui Hyun; Park, Chan Eon; An, Tae Kyu; Jang, Jaeyoung
- Issue Date
- Jun-2016
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Organic field-effect transistors (OFETs); Zirconium oxide; Zirconium acrylate; Complementary inverters; Low voltages; Solution processes
- Citation
- ORGANIC ELECTRONICS, v.33, pp.40 - 47
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 33
- Start Page
- 40
- End Page
- 47
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/5575
- DOI
- 10.1016/j.orgel.2016.03.005
- ISSN
- 1566-1199
- Abstract
- Solution-processed dielectric materials with a high dielectric constant (k) have attracted considerable attention due to their potential applications in low-voltage-operating organic field-effect transistors (OFETs) for realizing large-area and low-power electronic devices. In terms of device commercialization, the patterning of each film component via a facile route is an important issue. In this study, we introduce a photo-patternable precursor, zirconium acrylate (ZrA), to fabricate photo-patterned high-k zirconium oxide (ZrOx) dielectric layers with UV light. Solution-processed ZrA films were effectively micro-patterned with UV exposure and developing, and transitioned to ZrOx through a sol-gel reaction during deep-UV annealing. The UV-assisted and ∼10 nm-thick ZrOx dielectric films exhibited a high capacitance (917.13 nF/cm2 at 1 KHz) and low leakage current density (10−7 A/cm2 at 1.94 MV/cm). Those films could be utilized as gate dielectric layers of OFETs after surface modification with ultrathin cyclic olefin copolymer layers. Finally, we successfully fabricated organic complementary inverters exhibiting hysteresis-free operation and high voltage gains of over 42 at low voltages of ≤3 V.
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