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Retention Characteristics Dependent on the Trap Distribution of the Silicon Nitride Layer in TANOS Flash Memory Devices

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dc.contributor.author김태환-
dc.date.accessioned2021-08-03T17:53:34Z-
dc.date.available2021-08-03T17:53:34Z-
dc.date.created2021-06-30-
dc.date.issued2011-02-17-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/56113-
dc.publisher한국물리학회-
dc.titleRetention Characteristics Dependent on the Trap Distribution of the Silicon Nitride Layer in TANOS Flash Memory Devices-
dc.typeConference-
dc.contributor.affiliatedAuthor김태환-
dc.identifier.bibliographicCitation2011년(18회) 한국반도체 학술대회-
dc.relation.isPartOf2011년(18회) 한국반도체 학술대회-
dc.citation.title2011년(18회) 한국반도체 학술대회-
dc.citation.conferencePlace해비치 호텔& 리조트 제주 ,Korea-
dc.type.rimsCONF-
dc.description.journalClass2-
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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