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Retention Characteristics Dependent on the Trap Distribution of the Silicon Nitride Layer in TANOS Flash Memory Devices
- Authors
- 김태환
- Issue Date
- 17-Feb-2011
- Publisher
- 한국물리학회
- Citation
- 2011년(18회) 한국반도체 학술대회
- Conference Name
- 2011년(18회) 한국반도체 학술대회
- Place
- 해비치 호텔& 리조트 제주 ,Korea
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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