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Memory Margin Simulation of Cap-less Memory in strained Si on relaxed SiGe-on-insulator n-Metal-Oxide-Semiconductor Field-effect Transistor
- Authors
- 박재근
- Issue Date
- 21-Oct-2010
- Place
- Korea/ 평창 휘틱스파크
- Conference Name
- 한국물리학회 2010년 가을 논문학술발표회 및 임시총회
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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