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Effects of Post Annealing on the Properties of AL2O3/HfO/ZnO Thin Film Transistor Deposition by Atomic Layer Deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-03T20:48:35Z | - |
| dc.date.available | 2021-08-03T20:48:35Z | - |
| dc.date.issued | 2009-11-05 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/60228 | - |
| dc.title | Effects of Post Annealing on the Properties of AL2O3/HfO/ZnO Thin Film Transistor Deposition by Atomic Layer Deposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | GJ-NST 2009, International Conference on Nano Science and Nano Technology | - |
| dc.citation.conferencePlace | Mokpo National University, KOREA | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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