Organic-inorganic Nano-hybrid Semiconducting thin films for Flexible Electronic Devices

Abstract

We report a high-performance and air-stable flexible semiconductor which can be substituted for n-type organic semiconductors. We combined crystalline inorganic nanolayers with organic layers, leading to organic-inorganic nanohybrid n-type semiconductors. The inorganic layer constitutes an extended framework bonded by powerful covalent or ionic interactions to furnish high carrier mobility and good thermal and mechanical stability. The organic layer adds mechanical flexibility to the inorganic framework. Molecular layer doposition combined with atomic layer deposition was applied to fabricate a new n-type organic?inorganic nanohybrid semiconductor on flexible plastic substrates with accurate control of film thickness, large-scale uniformity, excellent conformality, good reproducibility, multilayer processing capability, sharp interfaces, and excellent film qualities at low temperature. The prepared nanohybrid thin films exhibited good thermal and mechanical stability, good flexibility, and excellent field effect mobility (>7 cm2/Vs) under low voltage operation (3 V). Furthermore, we also demonstrate the performance of p-n junction diodes prepared with the SAOLs-ZnO nanohybrid superlattice and pentacene.